View AUIRFR2607Z_8835529.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

www.irf.com 1 automotive mosfet AUIRFR2607Z features advanced process technology ultra low on-resistance 175c operating temperature fast switching repetitive avalanche allowed up to tjmax lead-free, rohs compliant automotive qualified * descriptionspecifically designed for automotive applications, this hexfet ? power mosfet utilizes the latest processing techniques to achieve extremely low on-resistance persilicon area. additional features of this design are a 175c junction operating temperature, fast switching speed and improved repetitive avalanche rating . these features combine to make this design an extremely efficient and reliable device for use in automotive applications and a wide variety of other applications. absolute maximum ratingsstresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. s d g d-pak AUIRFR2607Z gds gate drain source s d g d hexfet ? power mosfet i d @ t c = 25c continuous drain current, v gs @ 10v (silicon limited) i d @ t c = 100c continuous drain current, v gs @ 10v (silicon limited) a i d @ t c = 25c continuous drain current, v gs @ 10v (package limited) i dm pulsed drain current p d @t c = 25c power dissipation w linear derating factor w/c v gs gate-to-source voltage v e as single pulse avalanche energy (thermally limited) mj e as (tested ) single pulse avalanche energy tested value i ar avalanche current a e ar repetitive avalanche energy mj t j operating junction and t stg storage temperature range c soldering temperature, for 10 seconds mounting torque, 6-32 or m3 screw thermal resistance parameter typ. max. units r jc junction-to-case CCC 1.38 r ja junction-to-ambient (pcb mount) CCC 50 c/w r ja junction-to-ambient CCC 110 -55 to + 175 300 (1.6mm from case ) 10 lbf in (1.1n m) 110 0.72 20 45 32 180 4296 96 see fig.12a, 12b, 15, 16 hexfet ? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ v (br)dss 75v r ds(on) typ. 17.6m max. 22m i d (silicon limited) 45a i d (package limited) 42a pd - 96323 downloaded from: http:///

2 www.irf.com s tat i c el ectr i ca l ch aracter i st i cs @ t j = 2 5 c ( un l ess ot h erw i se spec ifi e d) parameter min. t y p. max. units v (br)dss drain-to-source breakdown voltage 75 CCC CCC v ? v (br)dss / ? t j breakdown voltage temp. coefficient CCC 0.074 CCC v/c r ds(on) static drain-to-source on-resistance CCC 17.6 22 m v gs(th) gate threshold voltage 2.0 CCC 4.0 v gfs forward transconductance 36 CCC CCC s i dss drain-to-source leakage current CCC CCC 20 CCC CCC 250 i gss gate-to-source forward leakage CCC CCC 200 gate-to-source reverse leakage CCC CCC -200 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge CCC 34 51 q gs gate-to-source charge CCC 8.9 CCC q gd gate-to-drain ("miller") charge CCC 14 CCC t d(on) turn-on delay time CCC 14 CCC t r rise time CCC59CCC t d(off) turn-off delay time CCC 39 CCC t f fall time CCC28CCC l d internal drain inductance between lead, 6mm (0.25in.) l s internal source inductance from package and center of die contact c iss input capacitance CCC 1440 CCC c oss output capacitance CCC 190 CCC c rss reverse transfer capacitance CCC 110 CCC c oss output capacitance CCC 720 CCC c oss output capacitance CCC 130 CCC c oss eff. effective output capacitance CCC 230 CCC di o d e ch aracter i st i cs parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage CCC CCC 1.3 v t r r reverse recovery time CCC 30 45 ns q r r reverse recovery charge CCC 28 42 nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld ) a 4.5 7.5 CCC CCC 45 180 ana ns ncnh CCC CCC pf CCC CCC CCC CCC v gs = 10v v dd = 38v i d = 30a r g = 15 t j = 25c, i s = 30a, v gs = 0v t j = 25c, i f = 30a, v dd = 38v di/dt = 100a/s conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 30a v ds = v gs , i d = 50a v ds = 75v, v gs = 0v v ds = 75v, v gs = 0v, t j = 125c mosfet symbol showing the integral reverse p-n junction diode. conditions v gs = 10v v gs = 0v v ds = 25v ? = 1.0mhz v gs = 0v, v ds = 1.0v, ? = 1.0mhz v gs = 0v, v ds = 60v, ? = 1.0mhz v gs = 0v, v ds = 0v to 60v v gs = 20v v gs = -20v v ds = 60v v ds = 25v, i d = 30a i d = 30a conditions notes through are on page 3 downloaded from: http:///

www.irf.com 3

!"!#

#

repetitive rating; pulse width limited bymax. junction temperature. (see fig. 11). limited by t jmax , starting t j = 25c, l = 0.21mh r g = 25 , i as = 30a, v gs =10v. part not recommended for use above this value. pulse width 1.0ms; duty cycle 2%. c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . limited by t jmax , see fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. this value determined from sample failure population. 100% tested to this value in production. when mounted on 1" square pcb (fr-4 or g-10 material) .for recommended footprint and soldering techniques refer to application note #an-994

calculated continuous current based on maximum allowablejunction temperature. package limitation current is 42a qualification information ? d pak msl1 qualification level automotive (per aec-q101) ?? comments: this part number(s) passed automotive qualification. irs industrial and consumer qualification level is granted by extension of the higher automotive level. charged device model class c5(1125v) (per aec-q101-005) moisture sensitivity level rohs compliant yes esd machine model class m4(425v) (per aec-q101-002) human body model class h1b(1000v) (per aec-q101-001) downloaded from: http:///

4 www.irf.com fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. typical forward transconductance vs. drain current 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60s pulse width tj = 175c 4.5v vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 v gs , gate-to-source voltage (v) 0.1 1.0 10.0 100.0 1000.0 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) v ds = 20v 60s pulse width t j = 2 5 c t j = 175c 0 1 02 03 04 0 i d, drain-to-source current (a) 0 10 20 30 40 50 60 g f s , f o r w a r d t r a n s c o n d u c t a n c e ( s ) t j = 25c t j = 175c v ds = 10v 380s pulse width 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60s pulse width tj = 25c 4.5v vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v downloaded from: http:///

www.irf.com 5 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 v ds , drain-to-source voltage (v) 0 400 800 1200 1600 2000 2400 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 1 02 03 04 05 0 q g total gate charge (nc) 0 4 8 12 16 20 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 60v vds= 30v vds= 12v i d = 30a for test circuit see figure 13 0.0 0.4 0.8 1.2 1.6 2.0 2.4 v sd , source-to-drain voltage (v) 0.1 1.0 10.0 100.0 1000.0 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 1 10 100 1000 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec dc downloaded from: http:///

6 www.irf.com 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature fig 10. normalized on-resistance vs. temperature ri (c/w) i (sec) 0.71826 0.0004230.66173 0.004503 j j 1 1 2 2 r 1 r 1 r 2 r 2 c ci i / ri ci= i / ri 25 50 75 100 125 150 175 t c , case temperature (c) 0 10 20 30 40 50 i d , d r a i n c u r r e n t ( a ) limited by package -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 2.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 30a v gs = 10v downloaded from: http:///

www.irf.com 7 q g q gs q gd v g charge !"$ fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as fig 14. threshold voltage vs. temperature r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v v gs 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 100 200 300 400 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 3.5a 4.8a bottom 30a 1k vcc dut 0 l -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 1.0a i d = 1.0ma i d = 250a id = 50a downloaded from: http:///

8 www.irf.com fig 15. typical avalanche current vs.pulsewidth fig 16. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 15, 16:(for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type.2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 12a, 12b. 4. p d (ave) = average power dissipation per single avalanche pulse.5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 15, 16). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figure 11) p d (ave) = 1/2 ( 1.3bvi av ) = t/ z thjc i av = 2 t/ [1.3bvz th ] e as (ar) = p d (ave) t av 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav assuming ? tj = 25c due to avalanche losses. note: in no case should tj be allowed to exceed tjmax 0.01 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 20 40 60 80 100 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1% duty cycle i d = 30a downloaded from: http:///

www.irf.com 9 fig 17. %&' ()(
*

for n-channel hexfet power mosfets

?

?
?

p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-appliedvoltage reverserecovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period +

!
"
#"! + + - + + + - - - ? ?
!
"#"" ? $
%% ? "#""&# v ds 90%10% v gs t d(on) t r t d(off) t f '( 1 ) $
0.1 % #$%$$ + - fig 18a. switching time test circuit fig 18b. switching time waveforms downloaded from: http:///

10 www.irf.com

%
, -. -

!"# '
/0/ 1101&1& 0

(2-3 downloaded from: http:///

www.irf.com 11

$ %

tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch downloaded from: http:///

12 www.irf.com ordering information base part package type complete part number form quantity AUIRFR2607Z dpak tube 75 AUIRFR2607Z tape and reel 2000 AUIRFR2607Ztr tape and reel left 3000 auirf2607ztrl tape and reel right 3000 auirf2607ztrr standard pack downloaded from: http:///

www.irf.com 13
unless specifically designated for the automotive market, international rectifier corporation and its subsidiaries (ir) reservethe right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. part numbers designated with the au prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. all products are sold subject to irs terms and conditions of sale supplied at the time of order acknowledgment. ir warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with irs standard warranty. testing and other quality control techniques are used to the extent ir deems necessary to support this warranty. except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. ir assumes no liability for applications assistance or customer product design. customers are responsible for their products and applications using ir components. to minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. reproduction of ir information in ir data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. reproduction of this information with alterati ons is an unfair and deceptive business practice. ir is not responsible or liable for such altered documentation. information ofthird parties may be subject to additional restrictions. resale of ir products or serviced with statements different from or beyond the parameters stated by ir for that product or service voids all express and any implied warranties for the associated ir product or service and is an unfair and deceptive business practice. ir is not responsible or liable for any such statements. ir products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the ir product could create a situation where personal injury or death may occur. should buyer purchase or use ir products for any such unintended or unauthorized application, buyer shall indemnify and hold international rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that ir was negligent regarding the design or manufacture of the product.ir products are neither designed nor intended for use in military/aerospace applications or environments unless the ir products are specifically designated by ir as military-grade or enhanced plastic. only products designated by ir as military-grade meet military specifications. buyers acknowledge and agree that any such use of ir products which ir has not designated as military-grade is solely at the buyers risk, and that they are solely responsible for compliance with all legal and regulat ory requirements in connection with such use.ir products are neither designed nor intended for use in automotive applications or environments unless the specific ir product s are designated by ir as compliant with iso/ts 16949 requirements and bear a part number including the designation au.buyers acknowledge and agree that, if they use any non-designated products in automotive applications, ir will not be responsible for any failure to meet such requirements for technical support, please contact irs technical assistance center http://www.irf.com/technical-info/ world headquarters: 233 kansas st., el segundo, california 90245 tel: (310) 252-7105 downloaded from: http:///

▲Up To Search▲

Price & Availability of AUIRFR2607Z

	To Download AUIRFR2607Z Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .